DC–40 GHz GS RF Probe for Wafer-Level RF Testing VST-40G-GS-XXX
P/N: VST-40G-GS-XXX
– DC–40 GHz GS probe for RF and microwave probing
– Ground–Signal layout for asymmetric pad structures
– Fine-pitch tips for dense wafer and PCB test pads
– 50 Ω path for repeatable high-frequency measurements
– 2.92 mm Female, 45° connector for probe-station integration
Engineering Note
VST-40G-GS-XXX is a DC–40 GHz GS RF probe for wafer-level RF and microwave measurements where a Ground-Signal contact layout is required. Its GS configuration supports asymmetric pad structures, compact probing regions, passive component evaluation, RF front-end debugging, and standard device characterization workflows. With a controlled 50 Ω path, 2.92 mm Female connector, 45-degree connector angle, and 100 μm to 1250 μm pitch range, the probe is designed for repeatable integration on standard RF probe stations.
Technical Specifications
| Part Number | VST-40G-GS-XXX |
|---|---|
| Product Type | GS RF Probe |
| Probe Configuration | GS / Ground-Signal |
| Frequency Range | DC–40 GHz |
| Insertion Loss | < 2.0 dB |
| Return Loss | > 12 dB |
| Impedance | 50 Ω |
| DC Current | ≤ 1 A |
| DC Voltage | ≤ 100 V |
| RF Power | ≤ 5 W |
| Connector | 2.92 mm Female |
| Connector Angle | 45-degree |
| Pitch Range | 100 μm–1250 μm or customized |
| Custom Pitch | Available down to 40 μm |
| Standard Pitch Step | 50 μm |
| Tip Size | 25 μm for 100–250 μm pitch; 50 μm for 300–1250 μm pitch |
Target Applications
Wafer-Level RF Testing
DC–40 GHz probing for RF and microwave devices requiring direct wafer-level contact and repeatable signal access.
Asymmetric Pad Layouts
Ground-Signal configuration supports non-symmetric pad structures and compact probing regions where standard GSG access is not required.
RF Front-End Debug
Suitable for PA, LNA, RF front-end, and module-level verification where stable 50 Ω probing and compact access are needed.
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