110 GHz GS RF Probe for On-Wafer and PCB Characterization VST-110G-GS

P/N: VST-110G-GS-XXX

  • For single-ended PCB and wafer-level testing
  • GS geometry for clean ground-signal probing
  • Fine-pitch tips for dense pad layouts
  • Well suited to mmWave device validation
  • Supports precision measurements through 110 GHz
Engineering Note
VST-110G-GS is a DC–110 GHz GS RF probe for single-ended on-wafer measurement and high-frequency PCB characterization. It uses a GS tip configuration, 1.00mm female interface, and 45-degree connector angle, with fine-pitch options from 50 μm to 500 μm. This configuration is intended for wafer-level and board-level measurements where low loss, stable contact, and repeatable high-frequency probing are required.

Technical Specifications

Part Number VST-110G-GS-XXX
Product Type GS RF probe
Frequency Range DC–110 GHz
Insertion Loss < 3.0 dB
Return Loss > 12 dB
Impedance 50 Ω
DC Current ≤ 1 A
DC Voltage ≤ 100 V
RF Power ≤ 5 W
Connector 1.00mm Female
Tip Configuration GS / SG
Connector Angle 45-degree
Pitch Range 100 μm–1250 μm or customized
Standard Pitch Step 50 μm
Tip Size 25 μm for 100–250 μm pitch; 50 μm for 300–1250 μm pitch

Target Applications

Wafer-Level mmWave Characterization
Intended for on-wafer measurement of mmWave devices where fine pitch and stable contact performance are required.
High-Speed IC and Interconnect Characterization
Suitable for chiplet, IC, and interconnect evaluation where single-ended high-frequency probing is required.
Fine-Pitch PCB and R&D Validation
Used for advanced R&D environments requiring fine-pitch probing on compact high-frequency structures and validation platforms.
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