110 GHz GS RF Probe for On-Wafer and PCB Characterization VST-110G-GS
P/N: VST-110G-GS-XXX
- For single-ended PCB and wafer-level testing
- GS geometry for clean ground-signal probing
- Fine-pitch tips for dense pad layouts
- Well suited to mmWave device validation
- Supports precision measurements through 110 GHz
Engineering Note
VST-110G-GS is a DC–110 GHz GS RF probe for single-ended on-wafer measurement and high-frequency PCB characterization. It uses a GS tip configuration, 1.00mm female interface, and 45-degree connector angle, with fine-pitch options from 50 μm to 500 μm. This configuration is intended for wafer-level and board-level measurements where low loss, stable contact, and repeatable high-frequency probing are required.
Technical Specifications
| Part Number | VST-110G-GS-XXX |
|---|---|
| Product Type | GS RF probe |
| Frequency Range | DC–110 GHz |
| Insertion Loss | < 3.0 dB |
| Return Loss | > 12 dB |
| Impedance | 50 Ω |
| DC Current | ≤ 1 A |
| DC Voltage | ≤ 100 V |
| RF Power | ≤ 5 W |
| Connector | 1.00mm Female |
| Tip Configuration | GS / SG |
| Connector Angle | 45-degree |
| Pitch Range | 100 μm–1250 μm or customized |
| Standard Pitch Step | 50 μm |
| Tip Size | 25 μm for 100–250 μm pitch; 50 μm for 300–1250 μm pitch |
Target Applications
Wafer-Level mmWave Characterization
Intended for on-wafer measurement of mmWave devices where fine pitch and stable contact performance are required.
High-Speed IC and Interconnect Characterization
Suitable for chiplet, IC, and interconnect evaluation where single-ended high-frequency probing is required.
Fine-Pitch PCB and R&D Validation
Used for advanced R&D environments requiring fine-pitch probing on compact high-frequency structures and validation platforms.
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